Shift register, gate driving circuit and display panel having the same, and method thereof

ABSTRACT

A shift register includes a plurality of stages each generating an output signal in sequence and including a buffering section, a driving section, a first charging section, and a charging control section. The buffering section receives one of a scan start signal and an output signal of a previous stage so that the driving section generates the output signal of a present stage. The first charging section includes a first terminal electrically connected to the driving section and a second terminal electrically connected to a first source voltage. The charging control section applies the output signal of a next stage to the first charging section. Therefore, a gradual failure of TFT is reduced.

This application claims priority to Korean Patent Application No.2004-78306, filed on Oct. 1, 2004 and all the benefits accruingtherefrom under 35 U.S.C. §119, and the contents of which in itsentirety are herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a shift register, a gate drivingcircuit including the shift register, a display panel including theshift register, and a method thereof. More particularly, the presentinvention relates to a shift register capable of reducing a gradualfailure of a thin film transistor (“TFT”), a gate driving circuitincluding the shift register, a display panel including the shiftregister, and a method of minimizing transistor failure in the shiftregister.

2. Description of the Related Art

Recently, in order to reduce a manufacturing cost and to slim down abezel of a display device, where a bezel is the border around a displayarea of a display device, a data driving integrated circuit (“IC”) or agate driving IC is directly formed on the display panel. In order toform the gate driving IC on the display panel, simplifying a structureof the gate driving IC including an amorphous silicon a-Si thin filmtransistor (“TFT”) is required.

According to a conventional shift register having the a-Si TFT, avoltage of a specific node is maintained in a low level by applyingrelatively high positive voltage to a gate electrode of the a-Si TFT.When, the relatively high positive voltage between gate and sourceelectrodes Vgs is applied to the gate electrode of the a-Si TFT for along time, a threshold voltage Vth of the a-Si TFT is shifted to beabout 1V to about 15V to induce a malfunction or misoperation.

BRIEF SUMMARY OF THE INVENTION

The present invention provides a shift register capable of preventing anoccurrence of a malfunction or misoperation.

The present invention also provides a gate driving circuit heaving theabove-mentioned shift register.

The present invention also provides a display panel having theabove-mentioned shift register.

In exemplary embodiments of a shift register according to the presentinvention, the shift register includes a plurality of stages. Each ofthe stages generates an output signal in sequence. Each of the stagesincludes a buffering section, a driving section, a first chargingsection, and a charging control section. The buffering section receivesone of a scan start signal and an output signal of a previous stage. Thedriving section generates the output signal of a present stage, when thebuffering section receives one of the scan start signal and the outputsignal of the previous stage. The first charging section includes afirst terminal electrically connected to the driving section and asecond terminal electrically connected to a first source voltage. Thecharging control section applies the output signal of a next stage tothe first charging section.

In exemplary embodiments of a gate driving circuit according to thepresent invention, the gate driving circuit includes a plurality ofstages. Each of the stages applies an output signal to gate lines insequence. Each of the stages includes a buffering section, a drivingsection, a first charging section, and a charging control section. Thebuffering section receives one of a scan start signal and an outputsignal of a previous stage. The driving section generates the outputsignal of a present stage, when the buffering section receives one ofthe scan start signal and the output signal of the previous stage. Thefirst charging section includes a first terminal electrically connectedto the driving section and a second terminal electrically connected to afirst source voltage. The charging control section applies the outputsignal of a next stage to the first charging section.

In exemplary embodiments of a display panel according to the presentinvention, the display panel includes a cell array circuit and a gatedriving circuit. The cell array circuit is formed on a substrate. Thecell array circuit includes a plurality of data lines and a plurality ofgate lines. The gate driving circuit is formed on the substrate. Thegate driving circuit includes a plurality of stages. Each of the stagesapplies an output signal to gate lines in sequence. Each of the stagesincludes a buffering section, a driving section, a first chargingsection, and a charging control section. The buffering section receivesone of a scan start signal and an output signal of a previous stage. Thedriving section generates the output signal of a present stage, when thebuffering section receives one of the scan start signal and the outputsignal of the previous stage. The first charging section includes afirst terminal electrically connected to the driving section and asecond terminal electrically connected to a first source voltage. Thecharging control section applies the output signal of a next stage tothe first charging section.

In exemplary embodiments of a method of minimizing a gradual failure ofa first transistor within a discharging section and a second transistorwithin a driving section of a unit stage of a shift register, the methodincludes connecting gate electrodes of the first and second transistorsto a node, providing a charging control section with a plurality of subtransistors connected in series to each other, connecting a sourceelectrode of a final sub transistor in the plurality of sub transistorswithin the charging control section to the node, providing a dischargingcontrol section with a plurality of sub transistors connected in seriesto each other, and connecting a d rain electrode of a first subtransistor in the plurality of sub transistors within the dischargingcontrol section to the node.

Therefore, a gradual failure of TFT is reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detailed exemplaryembodiments thereof with reference to the accompanying drawings, inwhich:

FIG. 1 is a circuit diagram illustrating an exemplary embodiment of ashift register according to the present invention;

FIGS. 2A to 2I are timing charts illustrating signals in FIG. 1;

FIGS. 3A and 3B are graphs illustrating simulation results outputtedfrom the shift region in FIG. 1;

FIG. 4 shows graphs illustrating a relation between a gate voltage and adrain current of a transistor suffering from a gradual failure;

FIG. 5 is a circuit diagram illustrating another exemplary embodiment ofa shift register according to the present invention;

FIG. 6 is a circuit diagram illustrating still another exemplaryembodiment of a shift register according to the present invention;

FIG. 7 is a circuit diagram illustrating still another exemplaryembodiment of a shift register according to the present invention;

FIG. 8 is a block diagram illustrating an exemplary embodiment of a gatedriving circuit according to the present invention;

FIG. 9 is a block diagram illustrating another exemplary embodiment of agate driving circuit according to the present invention;

FIG. 10 is a block diagram illustrating still another exemplaryembodiment of a gate driving circuit according to the present invention;and

FIG. 11 is a block diagram illustrating an exemplary embodiment of aliquid crystal panel according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

It should be understood that the exemplary embodiments of the presentinvention described below may be varied and modified in many differentways without departing from the inventive principles disclosed herein,and the scope of the present invention is therefore not limited to theseparticular following embodiments. Rather, these embodiments are providedso that this disclosure will be thorough and complete, and will fullyconvey the concept of the invention to those skilled in the art by wayof example and not of limitation.

Hereinafter, the embodiments of the present invention will be describedin detail with reference to the accompanied drawings. Like numeralsrefer to like elements throughout.

FIG. 1 is a circuit diagram illustrating an exemplary embodiment of ashift register according to the present invention, and FIGS. 2A to 2Iare timing charts illustrating signals in FIG. 1.

Referring to FIG. 1, a unit stage 100 of a shift register includes abuffering section 110, an output charging section 120, a source chargingsection 130, a driving section 140, a discharging section 150, adischarging control section 160, and a charging control section 170. Theunit stage 100 outputs a gate signal (or scan signal) based on a scanstart signal STV or an output signal Gn−1 of a previous stage receivedin the buffering section 110. In FIG. 1, the output signal of theprevious stage is represented by ‘Gn−1’. It should be understood that ashift register may include a plurality of stages 100.

The buffering section 110 includes a first transistor TR1. The firsttransistor TR1 includes a drain electrode, a gate electrode that iselectrically connected to a first node N1. The first transistor TR1receives the scan start signal STV or the output signal Gn−1 of aprevious stage through the drain electrode.

The output charging section 120 includes an output capacitor Cb. Theoutput capacitor Cb includes a first electrode electrically connected tothe first node N1 and a second electrode electrically connected to anoutput terminal of the present stage that is electrically connected toan n-th gate line Gn. In FIG. 1, the output signal of the present stageis also represented by ‘Gn’. A parasitic capacitor may be used as theoutput capacitor Cb.

The source charging section 130 includes a frame capacitor Ccharge. Theframe capacitor Ccharge includes a first electrode electricallyconnected to a first source voltage VOFF and a second electrodeelectrically connected to the second node N2. The frame capacitorCcharge has a capacitance for storing electrical charges for one frame.The frame capacitor Ccharge has, for example, a capacitance of about 1pico-Farad pF.

The driving section 140 includes a second transistor TR2 and a thirdtransistor TR3. The second transistor TR2 includes a gate electrodeelectrically connected to the first node N1, a source electrodeelectrically connected to the output terminal of the present stage thatis electrically connected to an n-th gate line Gn, and a drain electrodeelectrically connected to a clock terminal CK. The third transistor TR3includes a drain electrode electrically connected to the output terminalof the present stage that is electrically connected to an n-th gate lineGn, a gate electrode electrically connected to a second node N2, and asource electrode electrically connected to the first source voltageVOFF.

The discharging section 150 includes a fourth transistor TR4. The fourthtransistor TR4 includes a drain electrode electrically connected to thefirst node N1, a gate electrode electrically connected to the secondnode N2, and a source electrode electrically connected to the firstsource voltage VOFF.

The discharging control section 160 includes a first transistor groupTG1. The first transistor group TG1 includes a plurality of transistorsconnected in series. While the first transistor group TG1 may includemore than two sub transistors, as illustrated, the first transistorgroup TG1 includes a first sub transistor and a second sub transistor. Adrain electrode of the first sub transistor of the first transistorgroup TG1 is electrically connected to the second node N2. A sourceelectrode of the first sub transistor is electrically connected to adrain electrode of the second sub transistor. A source electrode of thesecond sub transistor is electrically connected to the first sourcevoltage VOFF. Gate electrodes of the first and second sub transistors ofthe first transistor group TG1 are electrically connected to each otherand to the first node N1.

The charging control section 170 includes a second transistor group TG2.The second transistor group TG2 includes a plurality of transistorsconnected in series. While the second transistor group TG2 may includemore than two sub transistors, as illustrated, the second transistorgroup TG2 includes a first sub transistor and a second sub transistor. Adrain electrode of the first sub transistor is electrically connected tothe output signal of a next stage Gn+1. A source electrode of the firstsub transistor is electrically connected to a drain electrode of thesecond sub transistor. A source electrode of the second sub transistoris electrically connected to the second node N2. Gate electrodes of thefirst and second sub transistors of the second transistor group TG2 areelectrically connected to each other and to the drain electrode of thefirst sub transistor, so that the output signal of the next stage Gn+1applied to the drain electrode of the first sub transistor is alsoapplied to the gate electrodes of the first and second sub transistorsof the second transistor group TG2.

The charging control section 170 drops the output signal of the nextstage Gn+1 by an amount of a sum of threshold voltages Vth of the subtransistors of the second transistor group TG2 to apply a dropped outputsignal of the next stage Gn+1 to the second node N2. For example, whenthe second transistor group TG2 includes n numbers of the subtransistors, an amount of voltage drop becomes n×Vth.

The discharging control section 160 and the charging control section 170electrically discharge a corresponding gate line GLn and maintain thegate line GLn to be at an off-level.

When the scan start signal STV or an output signal of a previous stageGn−1 is at a high level, the output capacitor Cb is electricallycharged, and when the second node N2 is at a high level, the outputcapacitor Cb is electrically discharged to perform an S-R latchoperation.

When the output capacitor Cb is electrically charged via the scan startsignal STV or the output signal of a previous stage Gn−1 is at a highlevel, a first clock signal CKV or a second clock signal CKVB applied tothe clock terminal CK is applied to a gate line of a display panelthrough the second transistor TR2 that is turned on such as by a voltageof the node N1, and when the third transistor TR3 is turned on by avoltage of the second node N2, a voltage of the gate line is pulled downto be first source voltage VOFF.

When the scan start signal STV or the output signal Gn−1 of a previousstage is applied to the first transistor TR1, the first transistor groupTG1 is turned on, and therefore the first source voltage Voff passesthrough the source electrode of the last sub transistor (e.g., thesecond sub transistor, as illustrated) within the first transistor groupTG1 and the drain electrode of the first sub transistor within the firsttransistor group TG1 to pull down a voltage of the second node N2 to bethe first source voltage VOFF, so that the third and fourth transistorsTR3 and TR4 are turned off via the gate electrodes of the third andfourth transistors TR3 and TR4 that are electrically connected to thesecond node N2. Therefore, the first node N1 is in a high level thatcorresponds to the output signal of the previous stage Gn−1.

When the second node N2 is in a low level, the fourth transistor TR4 isturned off to maintain the first node N1 in a low level. Therefore, theclock signal from the clock terminal CK is applied to the gate line.Also when the second node N2 is in a low level, the third transistor TR3is turned off, so that the gate line transfers the clock signal CKrather than the first source voltage Voff.

The output signal of the present stage Gn applied to the gate line isused for a start signal of a next stage Gn+1, so that the secondtransistor group TG2 is turned on to pull up the second node N2.Therefore, the frame capacitor Ccharge is electrically charged. Thesecond transistor group TG2 operates as a diode, so that even when thegate signal Gn+1 becomes low, the second node N2 maintains in highlevel.

When the second node N2 is in a high level, the third and fourthtransistors TR3 and TR4 are turned on, so that the first node N1 and theoutput signal Gn are lowered as the third and fourth transistors TR3 andTR4 apply the first source voltage Voff to the gate line Gn and thefirst node N1. The second node N2 maintains a high level until a gatesignal Gn−1 of the previous stage is applied to the gate electrode ofthe first transistor TR1.

When the gate signal Gn+1 is high, a voltage of Von−(n×Vth) is appliedto the second node N2, wherein Vth represents a threshold voltage of thesub transistors within the second transistor group TG2, and ‘n’represents a number of the sub transistors of the second transistorgroup TG2. For example, when the second transistor group TG2 includestwo sub transistors, ‘n’ equals two, when the second transistor groupTG2 includes three sub transistors, ‘n’ equals three, etc.

Referring to FIGS. 2A through 2I, when the gate signal Gn+1 becomes low,the first sub transistor in the first and second transistor groups TG1and TG2 operates under a condition that a voltage Vgs between the gateand source electrodes of the first sub transistor in the first andsecond transistor groups TG1 and TG2 is substantially 0V, and remainingsub transistors (or the second sub transistor) in the first and secondtransistor groups TG1 and TG2 operate under a condition that a voltageVgs between the gate and source electrodes of the remaining subtransistors (or the second sub transistor, as illustrated) in the firstand second transistor groups TG1 and TG2 is substantially −Vth.

For example, when the second transistor group TG2 includes three subtransistors, the first sub transistor operates under a condition thatthe voltage Vgs between the gate and source electrodes of the first subtransistor is 0V, and the second and third sub transistors operate undera condition that Vgs between the gate and source electrodes of thesecond and third sub transistors is −Vth.

When the first and second transistor groups TG1 and TG2 include subtransistors that operate under a condition of negative Vgs, anelectrical charge stored at the second node N2 is minimized to lower aleakage current that flows through the first and second transistorgroups TG1 and TG2, so that a voltage of the second node N2 becomesstable.

Thus, as shown in FIGS. 2A, 2F, and 2I, the gate signals for gate linesGn−1, Gn, and Gn+1 are delivered sequentially, as illustrated by gatesignal Gn−1 applied at sync1 and ending at sync2, gate signal Gn appliedat sync2 and ending at sync3, and gate signal Gn+1 applied at sync3 andending within a same time period as the span of gate signals Gn−1 andGn. As illustrated in FIGS. 2B and 2C, the first and second clocksignals CK and CKB are shown to have opposite phase from each other,where each high level and low level of the respective phases are appliedfor the same time period as the application of the gate signals. Asshown in FIGS. 2D and 2E, nodes N1 and N2 for the n-th stage are shownto have opposite high and low levels that extend for a time periodextending for twice the time of a high level gate or clock signal.Similarly, FIGS. 2G and 2H illustrate nodes N1 and N2 for the (n+1)-thstage that extend for a time period extending for twice the time of ahigh level gate or clock signal, and also start their high or low levelsmidway during the high or low levels of the nodes N1 and N2 for the n-thstage.

FIGS. 3A to 3B are graphs illustrating simulation results outputted fromthe shift region in FIG. 1. In particular, FIG. 3A illustrates the gatesignal Gn of the present stage, and the gate signal Gn+1 of the nextstage when a common voltage Vcom, applied to a unit pixel within adisplay device incorporating the unit stage, corresponds to the clocksignal, and FIG. 3B illustrates the gate signal Gn of the present stage,and the gate signal Gn+1 of the next stage when a common voltage Vcom,applied to the unit pixel, corresponds to DC voltage.

Referring to FIG. 3A, when the clock signal is used for the commonvoltage Vcom, impulses are generated before and after gate signals.

Referring to FIG. 3B, when the DC voltage is used for the common voltageVcom, impulses are reduced.

Therefore, adopting the DC voltage as the common voltage Vcom ispreferable.

When each of the first and second transistor groups TG1 and G2 employstwo sub transistors and a DC voltage applied to the second node N2 islowered, a gradual failure of the third and fourth transistors TR3 andTR4 is prevented.

FIG. 4 shows graphs illustrating a relation between a gate voltage Vgand a drain current id of a transistor suffering from a gradual failure.In FIG. 4, a first graph “1” is obtained from a TFT including a gateelectrode that is gradually suffering from about 20V applied thereto fora long time (for example, about 1 hour), a second graph “2” is obtainedfrom a TFT including a gate electrode that is gradually suffering fromabout 10V applied thereto for a long time (for example, about 1 hour),and a third graph “3” is obtained from a TFT including a gate electrodethat is gradually suffering from about 5V applied thereto for a longtime (for example, about 1 hour). A fourth graph “4” is obtained from aTFT including a gate electrode that is suffering from no DC voltageapplied thereto.

Referring to FIG. 4, a drain current id of about 3.55×10⁻⁴ A flows whenabout 5V DC voltage is applied to a gate electrode as shown in the thirdgraph “3”. On the other hand, a drain current id of about 5.22×10⁻⁵ Aflows when about 20V DC voltage is applied to a gate electrode as isshown in the first graph “1”. Therefore, the drain current idcorresponding to 5V DC voltage is about 6.8 times greater than the draincurrent id corresponding to 20V.

The result shows that when each of the discharging control section 160and the charging control section 170 includes a plurality of subtransistors electrically connected in series with each other, a gradualfailure of the third and fourth transistors TR3 and TR4 is reduced.

FIG. 5 is a circuit diagram illustrating another exemplary embodiment ofa shift register according to the present invention.

Referring to FIG. 5, a unit stage 200 of a shift register includes abuffering section 210, an output charging section 120, a source chargingsection 130, a driving section 140, a discharging section 150, adischarging control section 260, and a charging control section 170. Theunit stage 200 outputs a gate signal (or scan signal) based on a scanstart signal STV or an output signal Gn−1 of a previous stage. The unitstage 200 of this embodiment is substantially the same as the exemplaryembodiment illustrated in FIG. 1 except for the buffering section 210and the discharging control section 260. Thus, the same referencenumerals will be used to refer to the same or like parts as thosedescribed in the exemplary embodiment illustrated in FIG. 1 and anyfurther explanation concerning the above elements will be omitted.

The buffering section 210 includes a first transistor TR1 that includesa gate electrode electrically connected to a third node N3, a drainelectrode electrically connected to the gate electrode, and a sourceelectrode electrically connected to the first node N1. A scan startsignal or a previous gate signal (an output signal of a previous stage)Gn−1 is applied to the gate and drain electrodes of the first transistorTR1.

The discharging control section 260 includes a first transistor groupTG1 having a plurality of sub transistors connected in series. Whilemore than two sub transistors may be provided within the firsttransistor group TG2, as illustrated, the first transistor group TG1includes, for example, a first sub transistor and a second subtransistor. A drain electrode of the first sub transistor of the firsttransistor group TG1 is electrically connected to the second node N2. Asource electrode of the first sub transistor of the first transistorgroup TG1 is electrically connected to a drain electrode of the secondsub transistor. A source electrode of the second sub transistor iselectrically connected to first source voltage Voff. Gate electrodes ofthe first and second sub transistors are connected to the third node N3,and may also be electrically connected to each other as shown. Thus,this embodiment differs from the prior embodiment in that the gateelectrodes of the first and second sub transistors are connected to thethird node N3 instead of to the first node N1 as in the unit stage 100.

FIG. 6 is a circuit diagram illustrating still another exemplaryembodiment of a shift register according to the present invention.

Referring to FIG. 6, a unit stage 300 of a shift register includes abuffering section 310, an output charging section 120, a source chargingsection 130, a driving section 140, a discharging section 150, adischarging control section 360, and a charging control section 370. Theunit stage 300 outputs a gate signal (or scan signal) based on a scanstart signal STV or an output signal Gn−1 of a previous stage. The unitstage 300 of this embodiment is substantially the same as the exemplaryembodiment illustrated in FIG. 5 except for the buffering section 310,the discharging control section 360, and the charging control section370. Thus, the same reference numerals will be used to refer to the sameor like parts as those described in the unit stage 200 described withrespect to FIG. 5 and any further explanation concerning the aboveelements will be omitted.

The buffering section 310 includes a first transistor TR1. The firsttransistor TR1 includes a drain electrode, a gate electrode electricallyconnected to the drain electrode, and a source electrode electricallyconnected to a first node N1, similar to the buffering section 110 ofthe unit stage 100. The output signal Gn−1 of a previous stage isapplied to the drain and gate electrodes of the first transistor TR1.

The discharging control section 360 includes a first transistor groupTG1. The first transistor group TG1 includes a plurality of transistorconnected in series. While more than two sub transistors may be employedwithin the first transistor group TG1, as illustrated, the firsttransistor group TG1 includes, for example, a first sub transistor and asecond sub transistor. A drain electrode of a first sub transistor ofthe first transistor group TG1 is electrically connected to the secondnode N2. A source electrode of the first sub transistor is electricallyconnected to a drain electrode of the second sub transistor within thefirst transistor group TG1. A source electrode of the second subtransistor is electrically connected to the first source voltage VOFF.Gate electrodes of the first and second sub transistors of the firsttransistor group TG1 are electrically connected to the third node N3,and they may also be electrically connected to each other as shown. Thecharging control section 370 includes a second transistor group TG2.

The second transistor group TG2 includes a plurality of transistorsconnected in series. While the second transistor group TG2 may includemore than two sub transistors, as illustrated, the second transistorgroup TG2 includes, for example, a first sub transistor and a second subtransistor. A drain electrode of a first sub transistor is electricallyconnected to a second source voltage Von. A source electrode of thefirst sub transistor is electrically connected to a drain electrode ofthe second sub transistor. A source electrode of the second subtransistor is electrically connected to the second node N2. Gateelectrodes of the first and second sub transistors of the secondtransistor group TG2 are electrically connected to each other, and theoutput signal of the next stage Gn+1 is applied to the gate electrodesof the first and second sub transistors. Thus, if the first and secondsub transistors of the second transistor group TG2 are turned on viatheir respective gate electrodes receiving a high level of the outputsignal of the next stage Gn+1, then the second transistor group TG2applies the second source voltage Von to the second node N2.

FIG. 7 is a circuit diagram illustrating still another exemplaryembodiment of a shift register according to the present invention.

Referring to FIG. 7, a unit stage 400 of a shift register includes abuffering section 410, an output charging section 120, a source chargingsection 130, a driving section 140, a discharging section 150, adischarging control section 460, and a charging control section 470. Theunit stage 400 outputs a gate signal (or scan signal) based on a scanstart signal STV or an output signal Gn−1 of a previous stage. The unitstage 400 of this embodiment is substantially the same as the exemplaryembodiment illustrated in FIG. 1 except for the buffering section 410,the discharging control section 460, and the charging control section470. Thus, the same reference numerals will be used to refer to the sameor like parts as those described in the exemplary embodiment illustratedin FIG. 1 and any further explanation concerning the above elements willbe omitted.

The buffering section 410 includes a first transistor TR1 that includesa gate electrode electrically connected to a third node N3, a drainelectrode electrically connected to the gate electrode, and a sourceelectrode electrically connected to the first node N1. A scan startsignal or a previous gate signal (an output signal of a previous stage)Gn−1 is applied to the gate and drain electrodes of the first transistorTR1.

The discharging control section 460 includes a first transistor groupTG1 having a plurality of sub transistors connected in series. While thefirst transistor group TG1 may include more than two sub transistors, asillustrated, the first transistor group TG1 includes, for example, afirst sub transistor and a second sub transistor. A drain electrode ofthe first sub transistor of the first transistor group TG1 iselectrically connected to the second node N2. A source electrode of thefirst sub transistor of the first transistor group TG1 is electricallyconnected to a drain electrode of the second sub transistor. A sourceelectrode of the second sub transistor is electrically connected tofirst source voltage Voff. Gate electrodes of the first and second subtransistors are connected to the third node N3, and may also beelectrically connected to each other as shown.

The charging control section 470 includes a second transistor group TG2.The second transistor group TG2 includes a plurality of transistorsconnected in series. While the second transistor group TG2 may includemore than two sub transistors, the second transistor group TG2 includes,for example, a first sub transistor and a second sub transistor. A drainelectrode of a first sub transistor is electrically connected to asecond source voltage Von. A source electrode of the first subtransistor is electrically connected to a drain electrode of the secondsub transistor. A source electrode of the second sub transistor iselectrically connected to the second node N2. Gate electrodes of thefirst and second sub transistors of the second transistor group TG2 areelectrically connected to each other, and the output signal of the nextstage Gn+1 is applied to the gate electrodes of the first and second subtransistors. Thus, if the first and second sub transistors of the secondtransistor group TG2 are turned on via their respective gate electrodesreceiving a high level of the output signal of the next stage Gn+1, thenthe second transistor group TG2 applies the second source voltage Von tothe second node N2.

FIG. 8 is a block diagram illustrating an exemplary embodiment of a gatedriving circuit according to the present invention. The gate drivingcircuit may be applied to a liquid crystal display (“LCD”) apparatus.

Referring to FIG. 8, a gate driving circuit includes a shift register.The shift register includes a plurality of stages SRC11, SRC12, . . . ,SRC1N and SRC1D. The stages SRC11, SRC12, . . . , SRC1N correspond togate lines G1, G2, . . . , GN. The stage SRC1D corresponds to a dummystage. Each of the stages includes a first input terminal IN1, a secondinput terminal IN2, an output terminal OUT, a clock terminal CK, and afirst voltage source input terminal VOFF. The output terminal OUT ofm-th stage SRC1 m is electrically connected to the first input terminalIN1 of (m+1)-th stage SRC1 m+1, and to the second input terminal IN2 of(m−1)-th stage SRC1 m−1.

A scan start signal STV is applied to the first input terminal IN1 ofthe first stage SRC11. The scan start signal STV is outputted from anexternal graphic controller synchronized with a vertical synchronizationsignal Vsync.

The stages SRC11, SRC12, . . . , SRC1N apply output signals to gatelines G1, G2, . . . , GN formed on an array substrate, respectively. Afirst clock signal CKV is applied to the clock terminals CK of oddnumbered stages SRC11, SRC13, . . . SRC1N−1, as well as dummy terminalSRC1D. A second clock signal CKVB is applied to the clock terminals CKof even numbered stages SRC12, SRC14, . . . . SRC1N. The first andsecond clock signals CKV and CKVB have an opposite phase to each other,as illustrated in FIGS. 2B and 2C. A duty time of the first and secondclocks CKV and CKVB may be about 16.6/N [ms].

An output signal of an m-th stage SRC1 m, which corresponds to a controlsignal, is applied to the second input terminal IN2 of an (m−1)-th stageSRC1 m−1.

Therefore, each of the stages SRC11, SRC12, . . . , SRC1N applies theoutput signal to the gate lines in sequence.

The last stage SRC1N requires a control signal applied to the secondinput terminal IN2 of the last stage SRC1N, therefore the shift registerincludes the dummy stage SRC1D in order to apply the control signal tothe second input terminal IN2 of the last stage SRC1N.

As previously described, the first and second clock signals CKV and CKVBhave opposite phase to each other. Alternatively, the first and secondclock signals CKV and CKVB may have a phase difference such as 90degrees, 270 degrees, etc. Furthermore, the stages of the shift registerare divided into two sets of stages including odd numbered stages havingthe first clock signal CKV applied thereto, and even numbered stageshaving the second clock signal CKVB applied thereto. Alternatively, thestages may be divided into more than two sets.

As described above, according to the present invention, a node, whichdischarges the gate lines or maintains the gate lines to be in a stablevoltage, is electrically connected to another node in the circuit, sothat the node maintains a relatively low voltage.

When a high voltage is applied to a transistor, a threshold voltage Vthis changed to be in a range from about 1V to about 15V, so that thetransistor suffers a gradual failure. Therefore, when the relatively lowvoltage is applied to the node that is electrically connected to thetransistor, the gradual failure of the transistor is prevented.

FIG. 9 is a block diagram illustrating another exemplary embodiment of agate driving circuit according to the present invention. The gatedriving circuit may be applied to an LCD apparatus.

Referring to FIG. 9, a gate driving circuit includes a shift register.The shift register includes a plurality of stages SRC21, SRC22, . . . ,SRC2N, SRC2D. The stages SRC21, SRC22, . . . , SRC2N correspond to gatelines G1, G2, . . . , GN. The stage SRC2D corresponds to a dummy stage.Each of the stages SRC21, SRC22, . . . , SRC2N, SRC2D includes a firstinput terminal IN1, a second input terminal IN2, an output terminal OUT,a first clock terminal CK1, a second clock terminal CK2, and a firstvoltage source input terminal VOFF. The output terminal OUT of m-thstage SRC2 m is electrically connected to the first input terminal IN1of (m+1)-th stage SRC2 m+1, and to the second input terminal IN2 of(m−1)-th stage SRC2 m−1.

A scan start signal STV is applied to the first input terminal IN1 ofthe first stage SRC21. The scan start signal STV is outputted from anexternal graphic controller synchronized with a vertical synchronizationsignal Vsync.

The stages SRC21, SRC22, . . . , SRC2N apply output signals to gatelines G1, G2, . . . , GN formed on an array substrate, respectively. Afirst clock signal CKV and a second clock signal CKVB are applied to thefirst and second clock terminals CK1 and CK2 of odd numbered stagesSRC21, SRC23, . . . , SRC2N−1, SRC2D, respectively. The first clocksignal CKV and the second clock signal CKVB are applied to the secondand first clock terminals CK2 and CK1 of even numbered stages SRC22,SRC24, . . . , SRC2N, respectively. The first and second clock signalsCKV and CKVB have an opposite phase to each other, as illustrated inFIGS. 2B and 2C. A duty time of the first and second clocks CKV and CKVBmay be about 16.6/N [ms].

An output signal of an m-th stage SRC2 m, which corresponds to a controlsignal, is applied to the second input terminal IN2 of an (m⁻¹)-th stageSRC2 m−1.

Therefore, each of the stages SRC21, SRC22, . . . , SRC2N applies outputsignals to the gate lines in sequence.

The last stage SRC2N requires a control signal applied to the secondinput terminal IN2 of the last stage SRC2N, therefore the shift registerincludes an additional dummy stage SRC2D in order to apply the controlsignal to the second input terminal IN2 of the last stage SRC2N.

As previously described, the first and second clock signals CKV and CKVBhave opposite phase to each other. Alternatively, the first and secondcluck signals CKV and CKVB may have a phase difference, for example, 90degrees, 270 degrees, etc.

FIG. 10 is a block diagram illustrating still another exemplaryembodiment of a gate driving circuit according to the present invention.The gate driving circuit may be applied to an LCD apparatus.

Referring to FIG. 10, a gate driving circuit includes a shift register.The shift register includes a circuit section CS and a line section LS.The circuit section CS includes a plurality of stages SRC1, SRC2, . . ., SRCn, SRCn+1, wherein ‘n’ is an even number. The stages SRC1, SRC2, .. . , SRCn correspond to gate lines GL1, GL2, . . . , GLn. The stageSRCn+1 corresponds to a dummy stage. The line section LS includes aplurality of lines that may extend substantially perpendicular to thegate lines GL1, GL2, . . . , GLn.

Each of the stages SRC1, SRC2, . . . , SRCn, SRCn+1 includes a firstinput terminal IN1, a second input terminal IN2, an output terminal OUT,a first clock terminal CK1, a second clock terminal CK2, a groundvoltage terminal V1, and a reset terminal RE.

A first clock signal CKV and a second clock signal CKVB are applied tothe first and second clock terminals CK1 and CK2 of odd numbered stagesSRC1, SRC3, . . . , SRCn+1, respectively. A first clock signal CKV and asecond clock signal CKVB are applied to the second and first clockterminals CK2 and CK1 of even numbered stages SRC2, SRC4, . . . , SRCn,respectively. The first and second clock signals CKV and CKVB have adifferent phase with each other, such as illustrated in FIGS. 2B and 2C,for example.

A scan start signal STV is applied to the first input terminal IN1 ofthe first stage SRC1. The scan start signal STV is outputted from anexternal graphic controller synchronized with a vertical synchronizationsignal Vsync.

The output terminal OUT of m-th stage SRCm is electrically connected tothe first input terminal IN1 of (m+1)-th stage SRCm+1, and to the secondinput terminal IN2 of (m−1)-th stage SRCm−1.

The last stage SRCn requires a control signal applied to the secondinput terminal IN2 of the last stage SRCn, therefore the shift registerincludes an additional dummy stage SRCn+1 in order to apply the controlsignal to the second input terminal IN2 of the last stage SRCn.Additionally, a ground voltage VSS is applied to the ground voltageterminals V1 of the stages SRC1, SRC2, . . . , SRCn, SRCn+1, and theoutput signal of the dummy stage SRCn+1 is applied to the reset terminalRE of the stages SRC1, SRC2, . . . , SRCn.

The first clock signal CKV is outputted through output terminals OUT ofthe odd numbered stages SRC1, SRC3, . . . , SRCn+1, and the second clocksignal CKVB is outputted through output terminals OUT of the evennumbered stages SRC2, SRC4, . . . , SRCn.

The stages SRC1, SRC2, . . . , SRCn apply output signals to gate linesG1, G2, . . . , Gn formed on an array substrate, respectively, insequence.

The line section LS is adjacent to the circuit section CS. The linesection LS includes a start signal line SL1, a first clock line SL2, asecond clock line SL3, a ground voltage line SL4, and a reset line SL5.The start signal line SL1, the first clock line SL2, the second clockline SL3, the ground voltage line SL4, and the reset line SL5 aresubstantially in parallel with each other.

The reset line SL5 is positioned closet to the circuit section CS. Theground voltage line SL4 is positioned adjacent to the reset line SL5,and positioned between the reset line SL5 and the second clock line SL3.The second clock line SL3 is positioned adjacent to the ground voltageline SL4, and first clock line SL2 is positioned adjacent to the secondclock line SL3, and positioned between the second clock line SL3 and thestart signal line SL1. The start signal line SL1 is positioned adjacentto the first clock line SL2.

The scan start signal STV is applied to the first input terminal IN1 ofthe first stage SRC1 and the second input terminal IN2 of the last stageSRCn+1 through the start signal line SL1.

The first clock signal CKV is applied to the first clock terminals CK1of the odd numbered stages SRC1, SRC3, . . . , SRCn+1, and the secondclock terminals CK2 of the even numbered stages SRC2, SRC4, . . . , SRCnthrough the first clock line SL2.

The second clock signal CKVB is applied to the second clock terminalsCK2 of the odd numbered stages SRC1, SRC3, . . . , SRCn+1, and the firstclock terminals CK1 of the even numbered stages SRC2, SRC4, . . . , SRCnthrough the second clock line SL3.

The ground voltage VSS is applied to the ground voltage terminals V1 ofthe stages SRC1, SRC2, . . . , SRCn, SRCn+1 through the ground voltageline SL4.

A reset signal outputted from the last stage SRCn+1 is applied to thereset terminals RE of the stages SRC1, SRC2, . . . , SRCn, SRCn+1through the reset line SL5.

Hereinafter, a liquid crystal display (“LCD”) panel including a gatedriving circuit (or shift register) having the a-Si TFT will bedescribed.

FIG. 11 is a block diagram illustrating an exemplary embodiment of anLCD panel according to the present invention. In particular, FIG. 11illustrates an array substrate of a-Si TFT LCD panel.

Referring to FIG. 11, an array substrate 500 includes a cell arraycircuit 510, a data driving circuit 520, a first data terminal group522, a second data terminal group 524, a gate driving circuit 530, and agate terminal 532. The data driving circuit 520, the first data terminalgroup 522, the second data terminal group 524, the gate driving circuit530, and the gate terminal 532 may be formed through a process ofmanufacturing TFTs of the cell array circuit 510. The gate drivingcircuit 530 corresponds to any one of the exemplary shift registersillustrated in FIGS. 8, 9, and 10. The shift registers may employ anyone of the exemplary unit stages illustrated in FIGS. 1, 5, 6, and 7.

A data driving chip 518 is formed on a flexible printed circuit (“FPC”)516. The data driving chip 518 is electrically connected to the circuitsof the array substrate 500 through the FPC 516. The FPC 516 applies adata driving signal, a data timing signal, a gate timing signal, and agate signal to the data driving circuit 520 and the gate driving circuit530 of the array substrate 500.

The cell array circuit 510 includes m numbers of data lines DL1, DL2,DLm and n numbers of gate lines GL1, GL2, . . . , GLn. Each of the datalines DL1, DL2, . . . , DLm and each of the gate lines GL1, GL2, . . . ,GLn are substantially perpendicular to each other.

The cell array circuit 510 includes a plurality of TFTs arranged in amatrix shape. Each of the TFTs includes a gate electrode that iselectrically connected to one of the gate lines GL1, GL2, . . . , GLn, asource electrode that is electrically connected to one of the data linesDL1, DL2, . . . , DLm, and a drain electrode that is electricallyconnected to a pixel electrode PE. A layer of liquid crystal (“LC”) isdisposed between the pixel electrode PE and a common electrode CE of acolor filter substrate.

When data voltage is applied to the pixel electrode PE, electric fieldsare generated between the pixel electrode PE and the common electrode CEto alter an arrangement of liquid crystal molecules within the LC layer.As a result, optical transmittance is changed to display an image.

The data driving circuit 520 includes a shift register 426, and nnumbers of switching transistors SWT. The n numbers of switchingtransistors SWT are grouped into eight data line blocks BL1, BL2, . . ., BL8. Therefore, each of the data line blocks BL1, BL2, . . . , BL8includes n/8 number of switching transistors SWT

Also, each of the data line blocks BL1, BL2, . . . , BL8 includes n/8number of data input terminals electrically connected to the second dataterminal group 524 including n/8 number of terminals, respectively, andn/8 number of output terminals that are each electrically connected to adata line group including n/8 number of data lines, respectively.

Each of the switching transistors SWT includes a plurality of a-Si TFThaving a source electrode that is electrically connected to one of thedata lines DL1, DL2, . . . , DLm, a drain electrode that is electricallyconnected to one of the data input terminals, and a gate electrode thatis electrically connected to one of the gate block selection terminals.

Therefore, n numbers of data lines DL1, DL2, . . . , DLm are dividedinto eight blocks, and the shift register 426 selects the blocks insequence.

The shift register 426 receives the first clock signal CKV, the secondclock signal CKVB, and the scan start signal STV through the first dataterminal group 522. Output terminals of the shift register 426 areelectrically connected to the gate block selection terminals.

Thus, as described, for exemplary purposes only, the LCD panel employsthe gate driving circuit. Alternatively, the gate driving circuit may beemployed by other display panels such as, but not limited to, organiclight emitting diode (“OLED”) displays.

According to the present invention, the node of a stage, whichelectrically discharges a gate node or stably maintains the gate node tobe gate off voltage level, is electrically connected to a node in thestage, so that a relatively low voltage is maintained to prevent gradualfailure of TFT.

Having described the exemplary embodiments of the present invention andits advantages, it is noted that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by appended claims. Moreover, the useof the terms first, second, etc. do not denote any order or importance,but rather the terms first, second, etc. are used to distinguish oneelement from another. Furthermore, the use of the terms a, an, etc. donot denote a limitation of quantity, but rather denote the presence ofat least one of the referenced item.

1. A shift register comprising a plurality of stages, each of the stagesgenerating an output signal in sequence, each of the stages comprising:a buffering section receiving one of a scan start signal and an outputsignal of a previous stage; a driving section generating the outputsignal of a present stage, when the previous stage; a first chargingsection including a first terminal electrically connected to the drivingsection and a second terminal electrically connected to a first sourcevoltage; and a charging control section applying the output signal of anext stage to the first charging section.
 2. The shift register of claim1, wherein the first charging section includes a frame capacitor havingthe first and second terminals.
 3. The shift register of claim 1,wherein the first source voltage is an off voltage.
 4. The shiftregister of claim 1, further comprising a second charging section, thesecond charging section charging the output signal of the previous stagewhen the output signal of the previous stage is applied to the bufferingsection.
 5. The shift register of claim 4, wherein the second chargingsection includes an output capacitor.
 6. The shift register of claim 5,wherein the output capacitor is a parasitic capacitor.
 7. The shiftregister of claim 4, wherein the second charging section includes afirst terminal electrically connected to the buffering section through afirst node to be charged by one of the scan start signal and the outputsignal of the previous stage and a second terminal electricallyconnected to an output terminal of the present stage.
 8. The shiftregister of claim 1, further comprising a discharging sectiondischarging one of the scan start signal and the output signal of theprevious stage.
 9. The shift register of claim 8, further comprising adischarging control section controlling the discharging section based onone of the scan start signal, the output signal of the previous stage,and charges stored in a second charging section.
 10. The shift registerof claim 9, wherein the discharging control section is turned on whenone of the scan start signal and the output signal of the previous stageis applied thereto, and when the discharging control section is turnedon, the discharging control section lowers a voltage of the firstcharging section.
 11. The shift register of claim 9, wherein thedischarging control section includes a plurality of transistorsconnected in series.
 12. The shift register of claim 11, wherein gateelectrodes of the transistors of the discharging control section areconnected to the second charging section, a drain electrode of a firsttransistor within the discharging control section is electricallyconnected to the first charging section, and a source electrode of alast transistor within the discharging control section is electricallyconnected to the first source voltage.
 13. The shift register of claim11, wherein the output signal of the previous stage is applied to gateelectrodes of the transistors of the discharging control section, adrain electrode of a first transistor of the discharging control sectionis electrically connected to the first charging section, and a sourceelectrode of a last transistor of the discharging control section iselectrically connected to the first source voltage.
 14. The shiftregister of claim 1, wherein, when the output signal of the next stageis applied to the charging control section, the charging control sectionis turned on and charges the first charging section to a high level. 15.The shift register of claim 14, wherein the charging control sectionmaintains the high level until the output signal of the previous stageis applied to the buffering section.
 16. The shift register of claim 14,wherein the charging control section comprises a plurality oftransistors connected in series.
 17. The shift register of claim 16,wherein gate electrodes of the transistors of the charging controlsection are connected to a drain electrode of a first transistor withinthe charging control section and receive the output signal of the nextstage, and a source electrode of a last transistor within the chargingcontrol section is electrically connected to the first charging section.18. The shift register of claim 16, wherein the output signal of thenext stage received by the charging control section is applied to gateelectrodes of the transistors of the charging control section, a drainelectrode of a first transistor of the charging control section iselectrically connected to a second source voltage, and a sourceelectrode of a last transistor of the charging control section iselectrically connected to the first charging section.
 19. The shiftregister of claim 1, wherein each of the stages further comprises asecond charging section electrically connected to the buffering sectionthrough a first node to be charged by one of the scan start signal andthe output signal of the previous stage, the first charging sectionelectrically connected to the driving section and the charging controlsection through a second node, and the charging control sectionmaintaining the second node at a low level when the first node is at ahigh level.
 20. The shift register of claim 1, wherein the firstcharging section is electrically connected to the driving section andthe charging control section through a node, and the charging controlsection lowers a voltage of the node by a sum of threshold voltages ofthe transistors connected in series to use the voltage of the node for abias signal.
 21. The shift register of claim 1, wherein the drivingsection generates the output signal based on one of a first clock signaland a second clock signal, when one of the scan start signal and theoutput signal of the previous stage is applied to the buffering section.22. The shift register of claim 21, wherein the plurality of stagesincludes even numbered stages and odd numbered stages, the even numberedstages generating the output signal based on the second clock signal,and the odd numbered stages generating the output signal based on thefirst clock signal.
 23. A gate driving circuit comprising a plurality ofstages, each of the stages applying an output signal to gate lines insequence, each of the stages comprising: a buffering section receivingone of a scan start signal and an output signal of a previous stage; adriving section generating the output signal of a present stage, whenthe buffering section receives one of the scan start signal and theoutput signal of the previous stage; a first charging section includinga first terminal electrically connected to the driving section and asecond terminal electrically connected to a first source voltage; and acharging control section applying the output signal of a next stage tothe first charging section.
 24. The gate driving circuit of claim 23,further comprising: a second charging section, the second chargingsection charging the output signal of the previous stage when the outputsignal of the previous stage is applied to the buffering section; adischarging section discharging one of the scan start signal and theoutput signal of the previous stage; and a discharging control sectioncontrolling the discharging section based on one of the scan startsignal, the output signal of the previous stage, and charges stored inthe second charging section, wherein the discharging control sectionincludes a plurality of transistors connected in series, gate electrodesof the transistors connected to the second charging section, a drainelectrode of a first transistor within the discharging control sectionelectrically connected to the first charging section, and a sourceelectrode of a last transistor within the discharging control sectionelectrically connected to the first source voltage.
 25. The gate drivingcircuit of claim 23, further comprising: a second charging section, thesecond charging section charging the output signal of the previous stagewhen the output signal of the previous stage is applied to the bufferingsection; a discharging section discharging one of the scan start signaland the output signal of the previous stage; and a discharging controlsection controlling the discharging section based on one of the scanstart signal, the output signal of the previous stage, and chargesstored in the second charging section, wherein the discharging controlsection includes a plurality of transistors connected in series, theoutput signal of the previous stage applied to gate electrodes of thetransistors, a drain electrode of a first transistor within thedischarging control section electrically connected to the first chargingsection, and a source electrode of a last transistor within thedischarging control section electrically connected to the first sourcevoltage.
 26. The gate driving circuit of claim 23, further comprising: asecond charging section, the second charging section charging the outputsignal of the previous stage when the output signal of the previousstage is applied to the buffering section; a discharging sectiondischarging one of the scan start signal and the output signal of theprevious stage; and a discharging control section controlling thedischarging section based on one of the scan start signal, the outputsignal of the previous stage, and charges stored in the second chargingsection, wherein the charging control section includes a plurality oftransistors connected in series, gate electrodes of the transistorselectrically connected to a drain electrode of a first transistor withinthe charging control section and receive the output signal of the nextstage, and a source electrode of a last transistor within the chargingcontrol section electrically connected to the first charging section.27. The gate driving circuit of claim 23, further comprising: a secondcharging section, the second charging section charging the output signalof the previous stage when the output signal of the previous stage isapplied to the buffering section; a discharging section discharging oneof the scan start signal and the output signal of the previous stage;and a discharging control section controlling the discharging sectionbased on one of the scan start signal, the output signal of the previousstage, and charges stored in the second charging section, wherein thedischarging control section includes a plurality of transistorsconnected in series, the output signal of the previous stage applied tothe gate electrodes of the transistors, a drain electrode of a firsttransistor within the discharging control section electrically connectedto a second source voltage, and a source electrode of a last transistorwithin the discharging control section electrically connected to thefirst charging section.
 28. A display panel comprising: a cell arraycircuit formed on a substrate, the cell array circuit including aplurality of data lines and a plurality of gate lines; and a gatedriving circuit formed on the substrate, the gate driving circuitcomprising a plurality of stages, each of the stages applying an outputsignal to the gate lines in sequence, each of the stages comprising: abuffering section receiving one of a scan start signal and an outputsignal of a previous stage; a driving section generating the outputsignal of a present stage, when the buffering section receives one ofthe scan start signal and the output signal of the previous stage; afirst charging section including a first terminal electrically connectedto the driving section and a second terminal electrically connected to afirst source voltage; and a charging control section applying the outputsignal of a next stage to the first charging section.
 29. The displaypanel of claim 28, wherein the cell array circuit comprises: a switchingdevice electrically connected to one of the data lines and one of thegate lines; and a liquid crystal capacitor including a pixel electrodeelectrically connected to the switching device, and a common electrodehaving a DC voltage applied thereto.
 30. A method of minimizing agradual failure of a first transistor within a discharging section and asecond transistor within a driving section of a unit stage of a shiftregister, the method comprising: connecting gate electrodes of the firstand second transistors to a node; providing a charging control sectionwith a plurality of sub transistors connected in series to each other;connecting a source electrode of a final sub transistor in the pluralityof sub transistors within the charging control section to the node;providing a discharging control section with a plurality of subtransistors connected in series to each other; and, connecting a drainelectrode of a first sub transistor in the plurality of sub transistorswithin the discharging control section to the node.
 31. The method ofclaim 30, further comprising electrically connecting a charging sectionbetween the node and a first source voltage.
 32. The method of claim 30,further comprising dropping an output signal from the charging controlsection by an amount of a sum of threshold voltages of the subtransistors within the charging control section, and applying a droppedoutput signal to the node.
 33. The method of claim 30, furthercomprising applying one of a scan start signal and an output signal of aprevious stage to the discharging control section, turning on the subtransistors within the discharging control section, and pulling down avoltage of the node to a first source voltage.